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Observation of a blocking to channeling transition for MeV protons at stacking faults in silicon.

Abstract:

Images of stacking faults in silicon have been produced using transmitted, channeled protons. They reveal that when the proton beam angle to the (111) channeling planes is slightly reater than the channeling critical angle, the mean energy loss of protons passing through a stacking fault is less than that of protons passing through virgin crystal. We interpret this as being caused by the conversion of the proton trajectories from blocked to channeled owing to the lattice translation at the st...

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Publication status:
Published

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Publisher copy:
10.1103/physrevlett.74.411

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Journal:
Physical review letters
Volume:
74
Issue:
3
Pages:
411-414
Publication date:
1995-01-05
DOI:
EISSN:
1079-7114
ISSN:
0031-9007
URN:
uuid:a0f7e3b7-f1f8-4f00-8a59-4977f26e1c1e
Source identifiers:
16842
Local pid:
pubs:16842
Language:
English

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