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Charge trapping in polymer transistors probed by terahertz spectroscopy and scanning probe potentiometry

Abstract:

Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trapping in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from the reduction in the transmitted terahertz radiation under an applied gate voltage. Prolonged device operation creates an exponential decay in the differential terahertz transmission, compatible with an increase in the density of trapped holes in the polymer ...

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Publication status:
Published

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Publisher copy:
10.1063/1.2340057

Authors


Lloyd-Hughes, J More by this author
Richards, T More by this author
Sirringhaus, H More by this author
Castro-Camus, E More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
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Journal:
APPLIED PHYSICS LETTERS
Volume:
89
Issue:
11
Pages:
112101-112101
Publication date:
2006-09-11
DOI:
ISSN:
0003-6951
URN:
uuid:a0d6f0f5-5577-4a51-b8a1-9f1e72d587b0
Source identifiers:
23059
Local pid:
pubs:23059
Language:
English

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