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Charge trapping in polymer transistors probed by terahertz spectroscopy and scanning probe potentiometry

Abstract:

Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trapping in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from the reduction in the transmitted terahertz radiation under an applied gate voltage. Prolonged device operation creates an exponential decay in the differential terahertz transmission, compatible with an increase in the density of trapped holes in the polymer ...

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Publication status:
Published

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Publisher copy:
10.1063/1.2340057

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Role:
Author
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Journal:
APPLIED PHYSICS LETTERS
Volume:
89
Issue:
11
Pages:
112101-112101
Publication date:
2006-09-11
DOI:
ISSN:
0003-6951
URN:
uuid:a0d6f0f5-5577-4a51-b8a1-9f1e72d587b0
Source identifiers:
23059
Local pid:
pubs:23059
Language:
English

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