Journal article
Charge trapping in polymer transistors probed by terahertz spectroscopy and scanning probe potentiometry
- Abstract:
-
Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trapping in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from the reduction in the transmitted terahertz radiation under an applied gate voltage. Prolonged device operation creates an exponential decay in the differential terahertz transmission, compatible with an increase in the density of trapped holes in the polymer ...
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- Publication status:
- Published
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- Publisher copy:
- 10.1063/1.2340057
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Authors
Bibliographic Details
- Journal:
- APPLIED PHYSICS LETTERS
- Volume:
- 89
- Issue:
- 11
- Pages:
- 112101-112101
- Publication date:
- 2006-09-11
- DOI:
- ISSN:
-
0003-6951
- Source identifiers:
-
23059
Item Description
- Language:
- English
- Pubs id:
-
pubs:23059
- UUID:
-
uuid:a0d6f0f5-5577-4a51-b8a1-9f1e72d587b0
- Local pid:
- pubs:23059
- Deposit date:
- 2012-12-19
Terms of use
- Copyright date:
- 2006
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