Conference item
Electron-hole plasma mott transition and stimulated emission in GaN
- Abstract:
-
We present femtosecond pump-probe reflectance measurements of excitons in GaN for various pump intensities. Saturation of the excitonic absorption with increasing carrier density has been measured in the case of resonant and non-resonant excitations during the rising times, and the exciton bleaching densities for various excitation energies have also been measured. We found that the resonant excitons are bleached at higher densities (similar to10 times) than the non-resonant excitons due to t...
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- Publication status:
- Published
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Bibliographic Details
- Journal:
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume:
- 45
- Pages:
- S526-S529
- Publication date:
- 2004-12-01
- Event title:
- 12th Seoul International Symposium on the Physics of Semiconductors and Applications
- ISSN:
-
0374-4884
Item Description
- Keywords:
- Pubs id:
-
pubs:28492
- UUID:
-
uuid:a094c150-4eb0-43f7-87e2-dc550db886ca
- Local pid:
- pubs:28492
- Source identifiers:
-
28492
- Deposit date:
- 2012-12-19
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- Copyright date:
- 2004
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