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Electron-hole plasma mott transition and stimulated emission in GaN

Abstract:

We present femtosecond pump-probe reflectance measurements of excitons in GaN for various pump intensities. Saturation of the excitonic absorption with increasing carrier density has been measured in the case of resonant and non-resonant excitations during the rising times, and the exciton bleaching densities for various excitation energies have also been measured. We found that the resonant excitons are bleached at higher densities (similar to10 times) than the non-resonant excitons due to t...

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Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Journal:
JOURNAL OF THE KOREAN PHYSICAL SOCIETY More from this journal
Volume:
45
Pages:
S526-S529
Publication date:
2004-12-01
Event title:
12th Seoul International Symposium on the Physics of Semiconductors and Applications
ISSN:
0374-4884
Keywords:
Pubs id:
pubs:28492
UUID:
uuid:a094c150-4eb0-43f7-87e2-dc550db886ca
Local pid:
pubs:28492
Source identifiers:
28492
Deposit date:
2012-12-19

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