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High-performance field effect transistors from solution processed carbon nanotubes

Abstract:

Nanoelectronic field effect transistors (FETs) are produced using solution processed individual carbon nanotubes (CNTs), synthesized by both arc discharge and laser ablation methods. We show that the performance of solution processed FETs approaches that of CVD-grown FETs if the nanotubes have minimal lattice defects and are free from surface contamination. This is achieved by treating the nanotubes to a high-temperature vacuum annealing process and using 1,2-dichloroethane for dispersion. We...

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Publisher copy:
10.1021/nn1020743

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Journal:
ACS Nano
Volume:
4
Issue:
11
Pages:
6659-6664
Publication date:
2010-11-23
DOI:
EISSN:
1936-086X
ISSN:
1936-0851
Source identifiers:
179079
Language:
English
Keywords:
Pubs id:
pubs:179079
UUID:
uuid:9d20ce1d-c6ab-4dd1-882c-6130a9c2766b
Local pid:
pubs:179079
Deposit date:
2012-12-20

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