Journal article icon

Journal article

Femtosecond hole burning measurements in semiconductors

Abstract:
Femtosecond transient transmission spectroscopy has been used to study the generation and thermalisation of hot photoexcited electrons and holes in semiconductors. Work on bulk AlxGa1-xAs has been extended to include a detailed numerical model of carrier thermalisation and cooling, which allows for dynamic screening of carrier-phonon interactions. This model shows excellent agreement with experimentally observed effects such as hole burning, single LO-phonon emission by electrons and two-temperature behaviour of electrons and holes at early times (<10 ps). Hole burning measurements have also been made on type-I GaAs/AlAs superlattices, where the density dependence of the transient transmission spectra has been investigated. © 1992.

Actions


Access Document


Publisher copy:
10.1016/0022-2313(92)90165-6

Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author


Journal:
Journal of Luminescence More from this journal
Volume:
53
Issue:
1-6
Pages:
321-326
Publication date:
1992-01-01
DOI:
ISSN:
0022-2313


Language:
English
Pubs id:
pubs:134640
UUID:
uuid:9cf9b6f2-b393-4ad7-ae7f-85e86e770658
Local pid:
pubs:134640
Source identifiers:
134640
Deposit date:
2012-12-19

Terms of use



Views and Downloads






If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP