Journal article
Femtosecond hole burning measurements in semiconductors
- Abstract:
- Femtosecond transient transmission spectroscopy has been used to study the generation and thermalisation of hot photoexcited electrons and holes in semiconductors. Work on bulk AlxGa1-xAs has been extended to include a detailed numerical model of carrier thermalisation and cooling, which allows for dynamic screening of carrier-phonon interactions. This model shows excellent agreement with experimentally observed effects such as hole burning, single LO-phonon emission by electrons and two-temperature behaviour of electrons and holes at early times (<10 ps). Hole burning measurements have also been made on type-I GaAs/AlAs superlattices, where the density dependence of the transient transmission spectra has been investigated. © 1992.
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Authors
- Journal:
- Journal of Luminescence More from this journal
- Volume:
- 53
- Issue:
- 1-6
- Pages:
- 321-326
- Publication date:
- 1992-01-01
- DOI:
- ISSN:
-
0022-2313
- Language:
-
English
- Pubs id:
-
pubs:134640
- UUID:
-
uuid:9cf9b6f2-b393-4ad7-ae7f-85e86e770658
- Local pid:
-
pubs:134640
- Source identifiers:
-
134640
- Deposit date:
-
2012-12-19
Terms of use
- Copyright date:
- 1992
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