Adsorption, etching and photo-induced reactions at the Si(100)-CCl 4 interface
- The adsorption, thermal and photochemical reactions of carbon tetrachloride on Si(100) were investigated using X-ray photoelectron spectroscopy and thermal desorption spectroscopy. Initial CCl4 adsorption is dissociative at 175 K, with CCl4 multilayer formation at higher exposures. Silicon chlorides are the only thermal desorption products above 300 K. The influence of UV radiation on the desorption products is discussed.
- Publisher copy:
- Copyright date:
Views and Downloads
If you are the owner of this record, you can report an update to it here: Report update to this record