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Adsorption, etching and photo-induced reactions at the Si(100)-CCl 4 interface

Abstract:
The adsorption, thermal and photochemical reactions of carbon tetrachloride on Si(100) were investigated using X-ray photoelectron spectroscopy and thermal desorption spectroscopy. Initial CCl4 adsorption is dissociative at 175 K, with CCl4 multilayer formation at higher exposures. Silicon chlorides are the only thermal desorption products above 300 K. The influence of UV radiation on the desorption products is discussed.

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Publisher copy:
10.1088/0953-8984/1/SB/032

Authors


French, CL More by this author
Jackman, RB More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Physical and Theoretical Chem
Journal:
Journal of Physics: Condensed Matter
Volume:
1
Issue:
SB
Pages:
SB181-SB182
Publication date:
1989
DOI:
EISSN:
1361-648X
ISSN:
0953-8984
URN:
uuid:9a61d0f5-2405-4664-b9e5-feefa0222254
Source identifiers:
94389
Local pid:
pubs:94389
Language:
English

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