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Journal article

Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness

Publication status:
Published

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Publisher copy:
10.1063/1.2423232

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Tahraoui, A More by this author
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Journal:
APPLIED PHYSICS LETTERS
Volume:
89
Issue:
25
Pages:
253120-253120
Publication date:
2006-12-18
DOI:
ISSN:
0003-6951
URN:
uuid:97ca20a5-345b-4aa4-a5f0-3cd23fc196f0
Source identifiers:
2552
Local pid:
pubs:2552

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