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ARSENIC SEGREGATION TO SILICON SILICON-OXIDE INTERFACES

Abstract:

Arsenic segregation at polycrystalline silicon/silicon and polycrystalline silicon/silicon oxide interfaces was examined directly by transmission electron microscopy (TEM) and scanning transmission electron microscopy(STEM). Segregation occurring precisely at these interfaces was identified. A simple model was proposed based on arsenic segregation to structural units containing dangling bonds and consequent bond saturation. The removal of these dangling bonds will then play an important role ...

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Publication status:
Published

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Publisher copy:
10.1063/1.336118

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Journal:
JOURNAL OF APPLIED PHYSICS
Volume:
58
Issue:
3
Pages:
1259-1262
Publication date:
1985-01-01
DOI:
ISSN:
0021-8979
URN:
uuid:9577f06f-5e88-4358-8feb-f60e08318b11
Source identifiers:
2211
Local pid:
pubs:2211
Language:
English

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