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ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.

Abstract:

The EBIC mode of the SEM was used to study the electronic properties of individual dislocations in silicon at high spatial resolution. A theory of EBIC, relating the contrast to the fundamental defect parameters, such as the carrier lifetime in the vicinity of the defect, is presented. A means for the determination of defect energy levels at high spatial resolution is proposed. First results of a project designed to yield information on the energy levels associated with dislocations in Si are...

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Journal:
Physica B: Physics of Condensed Matter and C: Atomic, Molecular and Plasma Physics, Optics
Volume:
116 BandC
Issue:
1-3
Pages:
600-605
Publication date:
1982-02-05
ISSN:
0165-1757
URN:
uuid:952914fd-4416-42b3-a3e2-4ebc3670f467
Source identifiers:
502438
Local pid:
pubs:502438
Language:
English

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