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Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications.

Abstract:

We successfully fabricated ferroelectric-gate field effect transistor (FEFET)-based nonvolatile memory devices using an n-type Si nanowire coated with omega-shaped-gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) via a low-temperature fabrication process. Our FEFET memory devices with controllable threshold voltage via adjustment of the doping concentration exhibit excellent memory characteristics with ultra-low ON state power dissipation (≤3 nW), a large modulation in c...

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Publication status:
Published

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Publisher:
Institute of Physics Publishing
Journal:
Nanotechnology
Volume:
25
Issue:
20
Pages:
205201
Publication date:
2014-05-05
DOI:
EISSN:
1361-6528
ISSN:
0957-4484
URN:
uuid:949419c2-768a-4101-bd52-d1c33bab35a7
Source identifiers:
465717
Local pid:
pubs:465717

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