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Nanoscale phase transformation in Ge2Sb2Te5 using encapsulated scanning probes and retraction force microscopy.

Abstract:

Encapsulated conducting probes that can sustain high currents are used to study the nanoscale properties of thin-film stacks comprising of a phase-change chalcogenide, Ge(2)Sb(2)Te(5). Scaling studies on this promising candidate for random-access memory devices had thus far required extensive lithography and nanoscale growth. This seriously hampers rapid materials characterization. This article describes the use of two key techniques, an encapsulated conductive probe and its use in retraction...

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Publication status:
Published

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Publisher copy:
10.1063/1.3204449

Authors


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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Sebastian, A More by this author
Pozidis, H More by this author
Despont, M More by this author
Journal:
The Review of scientific instruments
Volume:
80
Issue:
8
Pages:
083701
Publication date:
2009-08-05
DOI:
EISSN:
1089-7623
ISSN:
0034-6748
URN:
uuid:935437a1-31d5-4bab-bf84-f37c99f5ccc6
Source identifiers:
410822
Local pid:
pubs:410822
Language:
English

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