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Formation of self-assembled InAs quantum dots on (110) GaAs substrates

Abstract:
Self-assembled InAs QDs were grown on (110) GaAs substrates by incorporating a thin AlAs layer below each InAs QD layer. QD formation was verified by PL spectroscopy and AFM.
Publication status:
Published

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Publisher copy:
10.1063/1.1633683

Authors


Wasserman, D More by this author
Hadjipanayi, M More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Journal:
APPLIED PHYSICS LETTERS
Volume:
83
Issue:
24
Pages:
5050-5052
Publication date:
2003-12-15
DOI:
ISSN:
0003-6951
URN:
uuid:9353f32d-2519-4c25-8530-236eba432e7b
Source identifiers:
18541
Local pid:
pubs:18541
Language:
English

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