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THE INTERACTION OF WF6 WITH SI(100) - THERMAL AND PHOTON INDUCED REACTIONS

Abstract:

The thermal and UV photon-induced interaction between WF6 and Si(100) has been examined using AES and thermal desorption mass spectrometry. At 77 K WF6 physisorbs on the silicon surface. Above 150 K dissociative chemisorption phases are formed, which decompose in three distinct stages as the temperature is raised in the range 300-900 K to desorb silicon fluoride and produce a Si/W interface. The results suggest that WF6 rapidly forms a thin corrosion film on Si(100) above 300 K which exerts a...

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Publication status:
Published

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Authors


JACKMAN, R More by this author
Journal:
SURFACE SCIENCE
Volume:
201
Issue:
1-2
Pages:
47-58
Publication date:
1988-07-05
DOI:
ISSN:
0039-6028
URN:
uuid:92bc10c4-f627-45b9-8cb7-cbdb0e470feb
Source identifiers:
43015
Local pid:
pubs:43015
Language:
English

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