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Time-resolved photoluminescence from hot two-dimensional carriers in GaAsGaAlAs MQWS

Abstract:
Picosecond time-resolved measurements of luminescence from hot carriers confined in GaAsGaAlAs multiple quantum wells show that energy loss rates are substantially slower than those predicted for 2D carriers. We review our recent experiments and present results for photoexcitation of (1) GaAs layers only, (2) both GaAs and GaAlAs layers. We compare the energy loss rates in samples with different well widths. Finally, we present measurements of hot 2D carrier relaxation in the presence of high magnetic fields; at low fields the energy loss rate is reduced, but for B > 9 T we observe a rapid increase. © 1986.

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Publisher copy:
10.1016/0039-6028(86)91013-7

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author


Journal:
Surface Science More from this journal
Volume:
170
Issue:
1-2
Pages:
511-519
Publication date:
1986-04-03
DOI:
ISSN:
0039-6028


Language:
English
Pubs id:
pubs:134740
UUID:
uuid:9245c683-21dd-49c6-bd39-f9e9bf7b2e55
Local pid:
pubs:134740
Source identifiers:
134740
Deposit date:
2012-12-19

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