Journal article
Time-resolved photoluminescence from hot two-dimensional carriers in GaAsGaAlAs MQWS
- Abstract:
- Picosecond time-resolved measurements of luminescence from hot carriers confined in GaAsGaAlAs multiple quantum wells show that energy loss rates are substantially slower than those predicted for 2D carriers. We review our recent experiments and present results for photoexcitation of (1) GaAs layers only, (2) both GaAs and GaAlAs layers. We compare the energy loss rates in samples with different well widths. Finally, we present measurements of hot 2D carrier relaxation in the presence of high magnetic fields; at low fields the energy loss rate is reduced, but for B > 9 T we observe a rapid increase. © 1986.
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Authors
- Journal:
- Surface Science More from this journal
- Volume:
- 170
- Issue:
- 1-2
- Pages:
- 511-519
- Publication date:
- 1986-04-03
- DOI:
- ISSN:
-
0039-6028
- Language:
-
English
- Pubs id:
-
pubs:134740
- UUID:
-
uuid:9245c683-21dd-49c6-bd39-f9e9bf7b2e55
- Local pid:
-
pubs:134740
- Source identifiers:
-
134740
- Deposit date:
-
2012-12-19
Terms of use
- Copyright date:
- 1986
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