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Femtosecond exciton dynamics and the mott transition in GaN under resonant excitation

Abstract:

We present resonant femtosecond pump-probe reflectance measurements of excitons in high quality wurtzite GaN epilayers for a range of lattice temperatures and various pump intensities. From the density dependence of the excitonic bleaching we find that the Mott density is n(Mott) less than or equal to 2.2 x 10(19) cm(-3). At 4 K we find that the exciton dynamics is dominated by trapping at defects via acoustic phonon emission on a timescale of similar to 16 ps. At temperatures above 60 K we o...

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Beaumont, B More by this author
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Volume:
216
Issue:
1
Pages:
57-62
Publication date:
1999-11-05
DOI:
ISSN:
0370-1972
URN:
uuid:9027a747-f19f-4c24-bf70-a8a582341142
Source identifiers:
4824
Local pid:
pubs:4824

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