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Journal article

Damage to epitaxial GaN layers by silicon implantation

Publication status:
Published

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Publisher copy:
10.1063/1.117526

Authors


Williams, JS More by this author
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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Pearton, SJ More by this author
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Journal:
APPLIED PHYSICS LETTERS
Volume:
69
Issue:
16
Pages:
2364-2366
Publication date:
1996-10-14
DOI:
ISSN:
0003-6951
URN:
uuid:8fee72a3-4939-4690-a12c-f290e2c2ef24
Source identifiers:
27789
Local pid:
pubs:27789

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