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Simulations of shock-induced phase transitions in silicon

Abstract:

An understanding of the fundamental mechanism behind the relief of shear stress in single-crystal silicon subject to loading by shock-waves has to this day remained elusive. What is known is that this material undergoes a first-order pressure-induced polymorphic phase transition from its ambient pressure cubic-diamond (cd) crystal structure to its first stable high-pressure phase, known as β-Sn, at a pressure of about 120 kbar under hydrostatic compression. By investigati...

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Institution:
University of Oxford
Oxford college:
Trinity College
Department:
Mathematical,Physical & Life Sciences Division - Physics - Atomic & Laser Physics

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Role:
Supervisor
Publication date:
2013
Type of award:
DPhil
Level of award:
Doctoral
URN:
uuid:8f8d5f8f-941d-4167-9066-85389c4a3dd5
Local pid:
ora:11300

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