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TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.

Abstract:

The EBIC contrast from extended defects in semiconductors can, in principle, be related to the defect capture cross-section for minority carriers and hence to the details of the recombination behaviour of individual defects. The monitoring of EBIC contrast as a function of temperature and dopant concentration is proposed as a possible method for deducing the positions of energy levels associated with well-characterised, individual dislocations. Some results of such an investigation are presen...

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Host title:
Journal de Physique (Paris), Colloque
Volume:
44
Issue:
9
Pages:
289-295
Publication date:
1983-09-01
ISSN:
0449-1947
ISBN:
2902731639
Pubs id:
pubs:502436
UUID:
uuid:8f41dd20-2703-48ca-ae3b-1715feb99b85
Local pid:
pubs:502436
Source identifiers:
502436
Deposit date:
2015-01-15

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