TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
The EBIC contrast from extended defects in semiconductors can, in principle, be related to the defect capture cross-section for minority carriers and hence to the details of the recombination behaviour of individual defects. The monitoring of EBIC contrast as a function of temperature and dopant concentration is proposed as a possible method for deducing the positions of energy levels associated with well-characterised, individual dislocations. Some results of such an investigation are presen...Expand abstract
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