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Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures.

Abstract:
(Figure Presented) Rings around the wire: Novel hierarchical heterostructures, assembled by radial deposition of InAs on GaAs nanowires with nonplanar side walls, result in the formation of InAs nanorings. The mechanism of formation of such structures, determined by transmission electron microscopy, involves the preferential nucleation of InAs at concave regions of the GaAs surface by capillarity effects. © 2009 Wiley-VCH Verlag GmbH and Co. KGaA.

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Publisher copy:
10.1002/anie.200804630

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author
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Journal:
Angewandte Chemie (International ed. in English)
Volume:
48
Issue:
4
Pages:
780-783
Publication date:
2009-01-01
DOI:
EISSN:
1521-3773
ISSN:
1433-7851
Source identifiers:
172657
Language:
English
Keywords:
Pubs id:
pubs:172657
UUID:
uuid:8e51bc17-418b-4ad5-a6f8-dc06574f37d8
Local pid:
pubs:172657
Deposit date:
2012-12-19

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