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Progress towards high power thin film diamond transistors

Abstract:

Early predictions that diamond would be a suitable material for high performance, high power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin film material. In this paper, commercially accessible polycrystalline thin film diamond has been turned p-type by the incorporation of near surface hydrogen. Schottky diodes and metal-semiconductor FETs (MESFETs) have been fabricated using this approach which display ...

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Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Physical & Theoretical Chem
Role:
Author
Volume:
8
Issue:
2-5
Pages:
966-971
Host title:
DIAMOND AND RELATED MATERIALS
Publication date:
1999-03-01
DOI:
ISSN:
0925-9635
Source identifiers:
36988
Keywords:
Pubs id:
pubs:36988
UUID:
uuid:8dd11d5f-c791-4a5c-b110-24247c57fe99
Local pid:
pubs:36988
Deposit date:
2012-12-19

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