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Progress towards high power thin film diamond transistors

Abstract:

Early predictions that diamond would be a suitable material for high performance, high power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin film material. In this paper, commercially accessible polycrystalline thin film diamond has been turned p-type by the incorporation of near surface hydrogen. Schottky diodes and metal-semiconductor FETs (MESFETs) have been fabricated using this approach which display ...

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Publication status:
Published

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Authors


Whitfield, MD More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Physical and Theoretical Chem
Jackman, RB More by this author
Volume:
8
Issue:
2-5
Pages:
966-971
Publication date:
1999-03-05
DOI:
ISSN:
0925-9635
URN:
uuid:8dd11d5f-c791-4a5c-b110-24247c57fe99
Source identifiers:
36988
Local pid:
pubs:36988

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