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Magnetic-field-induced enhancement of terahertz emission from III-V semiconductor surfaces

Abstract:

We discuss the origins of the magnetic-field-induced enhancement of terahertz (THz) emission from bulk semiconductor surfaces. The principal effect of the magnetic field is to rotate the THz dipole and hence dramatically increase the THz power radiated through the semiconductor surface. It also significantly affects the ability of the photo-created carriers to screen surface electric fields. The sensitivity of THz emission to the motion of photo-created carriers makes this an ideal probe of h...

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Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Host title:
PHYSICA E-LOW-DIMENSIONAL SYSTEMS and NANOSTRUCTURES
Volume:
13
Issue:
2-4
Pages:
896-899
Publication date:
2002-03-01
DOI:
ISSN:
1386-9477
Keywords:
Pubs id:
pubs:1968
UUID:
uuid:8d4874b1-f5e5-468e-86b2-45301ce8e889
Local pid:
pubs:1968
Source identifiers:
1968
Deposit date:
2012-12-19

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