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Controlled growth of vertically aligned ZnO nanowires with different crystal orientation of the ZnO seed layer.

Abstract:

A novel synthesis and growth method achieving vertically aligned zinc oxide (ZnO) nanowires on a silicon dioxide (SiO(2)) coated silicon (Si) substrate is demonstrated. The growth direction of the ZnO nanowires is determined by the crystal structure of the ZnO seed layer, which is formed by the oxidation of a DC-sputtered Zn film. The [002] crystal direction of the seed layer is dominant under optimized thickness of the Zn film and thermal treatment. Vertically aligned ZnO nanowires on SiO(2)...

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Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Engineering Science
Role:
Author
Journal:
Nanotechnology More from this journal
Volume:
19
Issue:
23
Pages:
235601
Publication date:
2008-06-01
DOI:
EISSN:
1361-6528
ISSN:
0957-4484
Language:
English
Pubs id:
pubs:387642
UUID:
uuid:8d34b04a-2105-4fef-9dc3-389a94fa3c84
Local pid:
pubs:387642
Source identifiers:
387642
Deposit date:
2013-11-16

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