Journal article
Controlled growth of vertically aligned ZnO nanowires with different crystal orientation of the ZnO seed layer.
- Abstract:
-
A novel synthesis and growth method achieving vertically aligned zinc oxide (ZnO) nanowires on a silicon dioxide (SiO(2)) coated silicon (Si) substrate is demonstrated. The growth direction of the ZnO nanowires is determined by the crystal structure of the ZnO seed layer, which is formed by the oxidation of a DC-sputtered Zn film. The [002] crystal direction of the seed layer is dominant under optimized thickness of the Zn film and thermal treatment. Vertically aligned ZnO nanowires on SiO(2)...
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- Publication status:
- Published
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Bibliographic Details
- Journal:
- Nanotechnology
- Volume:
- 19
- Issue:
- 23
- Pages:
- 235601
- Publication date:
- 2008-06-01
- DOI:
- EISSN:
-
1361-6528
- ISSN:
-
0957-4484
Item Description
- Language:
- English
- Pubs id:
-
pubs:387642
- UUID:
-
uuid:8d34b04a-2105-4fef-9dc3-389a94fa3c84
- Local pid:
- pubs:387642
- Source identifiers:
-
387642
- Deposit date:
- 2013-11-16
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- Copyright date:
- 2008
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