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CHARACTERIZATION OF BANDGAP STATES IN V-DOPED TIO2 BY HIGH-RESOLUTION X-RAY PHOTOEMISSION SPECTROSCOPY

Abstract:
Core- and valence-level photoemission spectra of V-doped TiO2 have been measured with monochromatic Al-Kα X-ray excitation. UHV annealing of as-presented samples leads to the appearance of a photoemission peak above the O 2p valence band within the bulk bandgap of TiO2. Simultaneous changes in V core-level spectra allow this peak to be identified as arising from electrons trapped on vanadium ions to generate localised VIV centres.
Publication status:
Published

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Publisher copy:
10.1039/ft9959103495

Authors


BEAMSON, G More by this author
Journal:
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS
Volume:
91
Issue:
19
Pages:
3495-3497
Publication date:
1995-10-07
DOI:
EISSN:
1364-5455
ISSN:
0956-5000
URN:
uuid:8c293216-daab-44b9-aff6-cdab5dff23cb
Source identifiers:
44912
Local pid:
pubs:44912
Language:
English

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