Journal article
CHARACTERIZATION OF BANDGAP STATES IN V-DOPED TIO2 BY HIGH-RESOLUTION X-RAY PHOTOEMISSION SPECTROSCOPY
- Abstract:
- Core- and valence-level photoemission spectra of V-doped TiO2 have been measured with monochromatic Al-Kα X-ray excitation. UHV annealing of as-presented samples leads to the appearance of a photoemission peak above the O 2p valence band within the bulk bandgap of TiO2. Simultaneous changes in V core-level spectra allow this peak to be identified as arising from electrons trapped on vanadium ions to generate localised VIV centres.
- Publication status:
- Published
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Bibliographic Details
- Journal:
- JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS
- Volume:
- 91
- Issue:
- 19
- Pages:
- 3495-3497
- Publication date:
- 1995-10-07
- DOI:
- EISSN:
-
1364-5455
- ISSN:
-
0956-5000
- Source identifiers:
-
44912
Item Description
- Language:
- English
- Pubs id:
-
pubs:44912
- UUID:
-
uuid:8c293216-daab-44b9-aff6-cdab5dff23cb
- Local pid:
- pubs:44912
- Deposit date:
- 2012-12-19
Terms of use
- Copyright date:
- 1995
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