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Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays

Abstract:

InxGa1-xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. The spatially-, spectrally-, and time-resolved emission properties of these structures were measured using cathodoluminescence hyper-spectral imaging and low-temperature microphotoluminescence spectroscopy. The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence...

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Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Robinson, JW More by this author
Martin, RW More by this author
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Volume:
772
Pages:
865-866
Publication date:
2005
ISSN:
0094-243X
URN:
uuid:8ba4a1be-a8b4-45ee-a00f-274e56f914ce
Source identifiers:
16184
Local pid:
pubs:16184
ISBN:
0-7354-0257-4

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