Conference item
Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays
- Abstract:
-
InxGa1-xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. The spatially-, spectrally-, and time-resolved emission properties of these structures were measured using cathodoluminescence hyper-spectral imaging and low-temperature microphotoluminescence spectroscopy. The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence...
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- Publication status:
- Published
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Bibliographic Details
- Journal:
- Physics of Semiconductors, Pts A and B
- Volume:
- 772
- Pages:
- 865-866
- Publication date:
- 2005-01-01
- Event title:
- 27th International Conference on the Physics of Semiconductors (ICPS-27)
- ISSN:
-
0094-243X
- Source identifiers:
-
16184
- ISBN:
- 0735402574
Item Description
- Keywords:
- Pubs id:
-
pubs:16184
- UUID:
-
uuid:8ba4a1be-a8b4-45ee-a00f-274e56f914ce
- Local pid:
- pubs:16184
- Deposit date:
- 2012-12-19
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- Copyright date:
- 2005
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