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GRAIN-BOUNDARY SOLUTE INTERACTIONS IN POLYCRYSTALLINE SILICON AND GERMANIUM

Abstract:

The behavior of semiconductors is affected by the presence and distribution of dopants. The properties involved range from electrical resistivity and carrier concentration to grain boundary mobility and self-diffusion. Understanding these phenomena necessitates the characterization of defect structure and chemistry. STEM analysis has been applied to the measurement of arsenic segregation to silicon grain boundaries. Quantitative information on the boundary concentration of arsenic has been ob...

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Publication status:
Published

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Journal:
ULTRAMICROSCOPY More from this journal
Volume:
14
Issue:
1-2
Pages:
131-134
Publication date:
1984-01-01
DOI:
ISSN:
0304-3991
Language:
English
Pubs id:
pubs:25080
UUID:
uuid:8b087f42-faab-4eaa-8250-e3614cfb9813
Local pid:
pubs:25080
Source identifiers:
25080
Deposit date:
2012-12-19

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