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Formation of shallow acceptor states in the surface region of thin film diamond

Abstract:

Considerable interest exists in fabrication of electronic devices from thin film polycrystalline diamond. To date, doping this material to achieve good free carrier concentrations and mobilities at room temperature has proved difficult. In this letter we report low temperature Hall effect measurements made on diamond films subjected to a hydrogenation process, such that the near surface region becomes p type without the addition of conventional dopant atoms. High carrier concentrations and mo...

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Publication status:
Published

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Publisher copy:
10.1063/1.1345806

Authors


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Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Physical and Theoretical Chem
Role:
Author
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Journal:
APPLIED PHYSICS LETTERS
Volume:
78
Issue:
22
Pages:
3460-3462
Publication date:
2001-05-28
DOI:
ISSN:
0003-6951
URN:
uuid:8aefde5e-b741-43f8-8927-34542944ad0c
Source identifiers:
37869
Local pid:
pubs:37869
Language:
English

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