Journal article icon

Journal article

THE ADSORPTION AND THERMAL-DECOMPOSITION OF HYDROGEN-SULFIDE ON GAAS(100)

Abstract:

The adsorption of H2S on the Ga-rich GaAs(100)(4 × 1) surface has been investigated using HREELS, TDS and AES techniques. At substrate temperatures of 190 K, it is observed that dissociative adsorption occurs initially to produce SH and H species, with the latter bonded to both Ga and As surface sites. As the surface coverage of these species rises, molecular adsorption is also observed. The molecularly adsorbed phase desorbs at temperatures of 240 K when the surface is heated. The SH and H s...

Expand abstract
Publication status:
Published

Actions


Access Document


Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Physical & Theoretical Chem
Role:
Author
Journal:
SURFACE SCIENCE More from this journal
Volume:
306
Issue:
1-2
Pages:
29-36
Publication date:
1994-04-01
DOI:
ISSN:
0039-6028
Pubs id:
pubs:44395
UUID:
uuid:8aebbb67-2ca5-47aa-b4bd-1ca342c8adc6
Local pid:
pubs:44395
Source identifiers:
44395
Deposit date:
2012-12-19

Terms of use


Views and Downloads






If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP