Journal article
THE ADSORPTION AND THERMAL-DECOMPOSITION OF HYDROGEN-SULFIDE ON GAAS(100)
- Abstract:
-
The adsorption of H2S on the Ga-rich GaAs(100)(4 × 1) surface has been investigated using HREELS, TDS and AES techniques. At substrate temperatures of 190 K, it is observed that dissociative adsorption occurs initially to produce SH and H species, with the latter bonded to both Ga and As surface sites. As the surface coverage of these species rises, molecular adsorption is also observed. The molecularly adsorbed phase desorbs at temperatures of 240 K when the surface is heated. The SH and H s...
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- Publication status:
- Published
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Bibliographic Details
- Journal:
- SURFACE SCIENCE
- Volume:
- 306
- Issue:
- 1-2
- Pages:
- 29-36
- Publication date:
- 1994-04-01
- DOI:
- ISSN:
-
0039-6028
Item Description
- Pubs id:
-
pubs:44395
- UUID:
-
uuid:8aebbb67-2ca5-47aa-b4bd-1ca342c8adc6
- Local pid:
- pubs:44395
- Source identifiers:
-
44395
- Deposit date:
- 2012-12-19
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- Copyright date:
- 1994
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