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Compound semiconductor nanowires for optoelectronic device applications

Abstract:: We review GaAs and InP nanowires and GaAs based nanowire heterostructures grown on (111)B substrates by metal organic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. Transmission electron microscopy, time-resolved photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, carrier lifetime and strain effects on the bandgap energy. © 2011 IEEE.

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APA Style

Gao, Q., Joyce, H., Paiman, S., Kang, J., Tan, H., Jagadish, C., Jackson, H., Smith, L., Yarrison-Rice, J., & Zou, J. (2011). Compound semiconductor nanowires for optoelectronic device applications. 2011 ICO International Conference on Information Photonics, IP 2011.

MLA Style

Gao, Q., et al. “Compound Semiconductor Nanowires for Optoelectronic Device Applications.” 2011 ICO International Conference on Information Photonics, IP 2011, 2011.

Chicago Style

Gao, Q, H Joyce, S Paiman, J Kang, H Tan, C Jagadish, H Jackson, L Smith, J Yarrison-Rice, and J Zou. 2011. “Compound Semiconductor Nanowires for Optoelectronic Device Applications.” 2011 ICO International Conference on Information Photonics, IP 2011.
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Publisher copy:: 10.1109/ICO-IP.2011.5953760

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+ Joyce, H More by this author

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+ Paiman, S More by this author

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Bibliographic Details

Journal:: 2011 ICO International Conference on Information Photonics, IP 2011
Publication date:: 2011-01-01
DOI:: 10.1109/ICO-IP.2011.5953760

Item Description

Pubs id:: pubs:179460
UUID:: uuid:8a8d3589-53f1-4dab-ad68-3a0a615aa0cb
Local pid:: pubs:179460
Source identifiers:: 179460
Deposit date:: 2012-12-19

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Copyright date:: 2011

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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