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Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL

Abstract:

Transmission electron microscopy (TEM), atomic force microscopy (AFM) and photoluminescence (PL) with and without additional magnetic fields (magneto-PL) were employed to study metal organic vapour phase epitaxy (MOVPE) grown, self-assembled InSb rich quantum dots (QDs) embedded in InAs and GaSb matrices. Depending on the growth conditions, coherently strained, partly relaxed, and completely relaxed InSb rich agglomerates were observed by means of TEM; AFM delivered more reliable QD number de...

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Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Journal:
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS
Issue:
164
Pages:
133-136
Publication date:
1999-01-01
Event title:
Conference on Microscopy of Semiconducting Materials
ISSN:
0951-3248
Source identifiers:
26950
ISBN:
0750306505
Keywords:
Pubs id:
pubs:26950
UUID:
uuid:8a5dcbc0-cff8-4331-8e0a-9c0e56537a37
Local pid:
pubs:26950
Deposit date:
2012-12-19

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