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Effect of carrier-induced hydrogenation on the passivation of the poly-Si/SiOx/c-Si interface

Publication status:
Published
Peer review status:
Peer reviewed

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Files:
Publisher copy:
10.1063/1.5049289

Authors


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Name:
Engineering & Physical Sciences Research Council
Grant:
EP/M022196/1
Publisher:
AIP Publishing
Host title:
AIP Conference Proceedings
Journal:
AIP Conference Proceedings More from this journal
Volume:
1999
Issue:
1
Article number:
040026
Publication date:
2018-08-10
Acceptance date:
2018-02-01
DOI:
EISSN:
1551-7616
ISSN:
0094-243X
ISBN:
9780735417151
Pubs id:
pubs:911127
UUID:
uuid:8a575ac8-de7f-4fda-905e-2c9582d3380b
Local pid:
pubs:911127
Source identifiers:
911127
Deposit date:
2019-08-08

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