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Metal-insulator transition in the two-band Hubbard model.

Abstract:

Calculations of the single-particle spectral function for the two-band Hubbard model as a function of doping and nearest-neighbor Coulomb repulsion are performed on finite-size clusters. It is shown that for hole doping the effect of the nearest-neighbor Coulomb repulsion leads to the effective pinning of the Fermi energy, and to the creation of new states in the charge-transfer gap. For electron doping, however, the model behaves as a one-band Hubbard model with the Fermi energy moving into ...

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Publication status:
Published

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Publisher copy:
10.1103/physrevb.51.14693

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Physical & Theoretical Chem
Role:
Author
Journal:
Physical review. B, Condensed matter More from this journal
Volume:
51
Issue:
20
Pages:
14693-14696
Publication date:
1995-05-01
DOI:
EISSN:
1095-3795
ISSN:
0163-1829
Language:
English
Pubs id:
pubs:36299
UUID:
uuid:89b616ee-61f4-44a2-adf6-117b694bc157
Local pid:
pubs:36299
Source identifiers:
36299
Deposit date:
2012-12-19

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