Conference item
Application of secondary electron dopant contrast imaging to InP/InGaAsP laser structures
- Abstract:
-
Electron microscopy techniques have great potential for dopant profiling because of their high spatial resolution in two-dimensions (2-D). Previous work has shown that contrast arises between p-, n- and i-doped material when observed in the secondary electron (SE) mode of a scanning electron microscope (SEM). This allows the direct 2-D mapping of the dopant distribution in a semiconductor structure. The results presented here apply the SE-technique to real fabrication issues that affect the o...
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- Publication status:
- Published
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Bibliographic Details
- Journal:
- MICROSCOPY OF SEMICONDUCTING MATERIALS 1997
- Issue:
- 157
- Pages:
- 561-564
- Publication date:
- 1997-01-01
- Event title:
- Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials
- ISSN:
-
0951-3248
- ISBN:
- 0750304642
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- Copyright date:
- 1997
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