Conference item
Tunnel barrier fabrication on Si and its impact on a spin transistor
- Abstract:
-
The realization of many future spintronic devices requires efficient spin injection into semiconductor structures. A Critical considerations include interfacial intermixing of the metallic components and oxygen with Si, and the conditions for Schottky barrier formation. Both impact the design of a silicon-based spin transistor, which tunnel injects carriers from a ferromagnetic emitter into the Si base and then tunnel-collects them via a ferromagnetic collector. A discussion of the characteri...
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- Publication status:
- Published
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Bibliographic Details
- Journal:
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
- Volume:
- 290
- Pages:
- 1383-1386
- Publication date:
- 2005-04-01
- Event title:
- Joint European Magnetic Symposia (JEMS 04)
- DOI:
- ISSN:
-
0304-8853
Item Description
- Keywords:
- Pubs id:
-
pubs:24304
- UUID:
-
uuid:88206e96-78b7-47f0-8043-1476e14e6710
- Local pid:
- pubs:24304
- Source identifiers:
-
24304
- Deposit date:
- 2012-12-19
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- Copyright date:
- 2005
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