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Stress and relief of misfit strain of Ge/Si(111)

Abstract:

The intrinsic stress and morphology of the Stranski-Krastanow system Ge/Si(111) have been investigated at deposition temperatures of 700-950 K. In a broad range of intermediate temperatures, only one distinct decline of stress is observed at the onset of three-dimensional islanding. Supported by a recent transmission electron microscopy study, the results demonstrate that the strain of Ge/Si(111), where the substrate surface in contrast to Ge/Si(001) is the glide plane for dislocations, is re...

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Publication status:
Published

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Publisher copy:
10.1063/1.122511

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Role:
Author
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Journal:
APPLIED PHYSICS LETTERS
Volume:
73
Issue:
18
Pages:
2579-2581
Publication date:
1998-11-02
DOI:
ISSN:
0003-6951
URN:
uuid:87d78d04-4f2a-4599-ac4b-88e196025807
Source identifiers:
151519
Local pid:
pubs:151519
Language:
English

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