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Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.

Abstract:

We demonstrate vertically aligned epitaxial GaAs nanowires of excellent crystallographic quality and optimal shape, grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. This is achieved by a two-temperature growth procedure, consisting of a brief initial high-temperature growth step followed by prolonged growth at a lower temperature. The initial high-temperature step is essential for obtaining straight, vertically aligned epitaxial nanowires on the (111)B GaAs substrate...

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Publisher copy:
10.1021/nl062755v

Authors


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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics
Jagadish, C More by this author
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Journal:
Nano letters
Volume:
7
Issue:
4
Pages:
921-926
Publication date:
2007-04-05
DOI:
EISSN:
1530-6992
ISSN:
1530-6984
URN:
uuid:833a9c8f-a552-4558-b696-69e8fb3c4fc3
Source identifiers:
172651
Local pid:
pubs:172651

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