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Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition

Abstract:

e show how an oxide passivating layer on the Cu surface before the growth of h-BN by chemical vapor deposition (CVD) can lead to increased domain sizes from 1 to 20 μm by reducing the nucleation density from 10 6 to 10 3 mm -2 . The h-BN domains within each Cu grain are well-oriented, indicating an epitaxial relationship between the h-BN crystals and the Cu growth substrates that leads to larger crystal domains within the film of ∼100 μm. Continuous films are grown and show a high degree of...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Accepted manuscript

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Publisher copy:
10.1021/acs.chemmater.7b01285

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Department:
Oxford, MPLS, Materials
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Department:
Oxford, MPLS, Materials
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Department:
Oxford, MPLS, Materials
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Department:
Oxford, MPLS, Materials
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Department:
Oxford, MPLS, Materials
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Publisher:
American Chemical Society Publisher's website
Journal:
Chemistry of Materials Journal website
Volume:
29
Issue:
15
Pages:
6252-6260
Publication date:
2017-07-25
Acceptance date:
2017-07-11
DOI:
ISSN:
1520-5002 and 0897-4756
Pubs id:
pubs:724303
URN:
uri:832a58b0-4ece-41fc-8579-6f95aee0ac2e
UUID:
uuid:832a58b0-4ece-41fc-8579-6f95aee0ac2e
Local pid:
pubs:724303

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