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MECHANISTIC STUDIES OF THE CBE GROWTH OF (100) GAAS USING THE NEW PRECURSOR TRI-ISOPROPYLGALLIUM

Abstract:

Modulated-beam mass spectrometry and temperature programmed desorption have for the first time been used to investigate the decomposition of tri-isopropyl gallium (TIPGa) on the (100) GaAs surface. Significant differences in the substrate temperature dependence of the GaAs growth rate have been observed between growth using TIPGa and the standard CBE precursor triethylgallium (TEGa). These differences are explained in terms of the balance between desorption and decomposition of adsorbed di-is...

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Publication status:
Published

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Authors


WHITEHOUSE, C More by this author
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Volume:
127
Issue:
1-4
Pages:
152-157
Publication date:
1993-02-05
DOI:
ISSN:
0022-0248
URN:
uuid:81faf021-5036-48b6-895f-5f4f1d6c2e49
Source identifiers:
44094
Local pid:
pubs:44094

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