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Onset of slip in silicon containing oxide precipitates

Abstract:

We report a study of the behavior of dislocations at oxide precipitates in (001) Czochralski silicon wafers for different oxide-precipitate sizes (100-600 nm), densities (108 - 1011 cm-3), and background oxygen concentrations (7.7 × 1017-10.35 × 1017 cm-3) using a bending technique with annular knife edges causing a biaxial stress distribution in the samples. The main advantage of the method we use is the possibility of detecting single slip events that may be caused by precipitates with spec...

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Publication status:
Published

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Publisher copy:
10.1063/1.1398596

Authors


Jurkschat, K More by this author
Senkader, S More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Gambaro, D More by this author
Falster, RJ More by this author
Journal:
JOURNAL OF APPLIED PHYSICS
Volume:
90
Issue:
7
Pages:
3219-3225
Publication date:
2001-10-01
DOI:
ISSN:
0021-8979
URN:
uuid:818bb4d5-3cc0-419b-9726-fdb0b2671fd3
Source identifiers:
13148
Local pid:
pubs:13148
Language:
English

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