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Journal article

Inhomogeneous sources of misfit dislocation generation in InxGa1-xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy

Publication status:
Published

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Journal:
MICRON
Volume:
28
Issue:
4
Pages:
309-312
Publication date:
1997-08-05
DOI:
ISSN:
0968-4328
URN:
uuid:7e26a381-814e-4605-bc0e-ac2b6bd182de
Source identifiers:
24871
Local pid:
pubs:24871

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