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Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands

Abstract:
The composition distribution of Ge(Si)/Si (001) islands grown at 700°C by molecular beam epitaxy is investigated using high-spatial resolution x-ray energy dispersive spectrometry in a scanning transmission electron microscope. Island shapes are investigated using cross-section transmission electron microscopy. Results show nonuniformity of the composition distribution in the islands, which affects the evolution of the aspect ratios of height-to-base diameter of dislocated islands. © 2000 American Institute of Physics.
Publication status:
Published

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Publisher copy:
10.1063/1.1290384

Authors


Cockayne, DJH More by this author
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Journal:
APPLIED PHYSICS LETTERS
Volume:
77
Issue:
9
Pages:
1304-1306
Publication date:
2000-08-28
DOI:
ISSN:
0003-6951
URN:
uuid:7d90ef2e-81e5-47f7-81da-3d2c18e15975
Source identifiers:
8245
Local pid:
pubs:8245
Language:
English

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