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Ultrathin all-2D lateral graphene/GaS/graphene UV photodetectors by direct CVD growth

Abstract:

UV-sensitive lateral all-two-dimensional (2D) photodetecting devices are produced by growing the large band gap layered GaS between graphene electrode pairs directly using chemical vapor deposition methods. The use of prepatterned graphene electrode pairs on the Si wafer enables more than 200 devices to be fabricated simultaneously. We show that the surface chemistry of the substrate during GaS leads to selective growth in graphene gaps, forming the lateral heterostructures, rather than on th...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1021/acsami.9b11984

Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
ORCID:
0000-0001-6333-7856
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Publisher:
American Chemical Society
Journal:
ACS Applied Materials and Interfaces More from this journal
Volume:
11
Issue:
51
Pages:
48172-48178
Publication date:
2019-12-13
Acceptance date:
2019-11-28
DOI:
EISSN:
1944-8252
ISSN:
1944-8244
Pmid:
31833364
Language:
English
Keywords:
Pubs id:
1077908
Local pid:
pubs:1077908
Deposit date:
2020-03-16

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