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Dynamical band gap renormalization in self-organized InAs/GaAs quantum dots

Abstract:
Dynamical hand gap renormalization has been observed in InAs/GaAs self-organized quantum dots using femtosecond time-resolved photoluminescence up-conversion. The energy shift correlates well with the time-dependent dot occupancy, and is independent of the carrier population in the wetting layer or GaAs barriers. These results indicate that the band gap renormalization is due mainly to the Coulomb exchange-correlation interactions among the confined carriers inside the dots.
Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Mowbray, DJ More by this author
Skolnick, MS More by this author
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Publisher:
Wiley
Volume:
178
Issue:
1
Pages:
345-348
Publication date:
2000-03-15
DOI:
EISSN:
1521-396X
ISSN:
0031-8965
URN:
uuid:7d42d491-dc91-4e0e-8cf6-440c7abe4633
Source identifiers:
13666
Local pid:
pubs:13666

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