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Nitrogen in silicon: Diffusion at 500-750 degrees C and interaction with dislocations

Publication status:
Published

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Publisher copy:
10.1016/j.mseb.2008.09.004

Authors


Alpass, CR More by this author
Murphy, JD More by this author
Falster, RJ More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Volume:
159-60
Pages:
95-98
Publication date:
2009-03-15
DOI:
ISSN:
0921-5107
URN:
uuid:783ebea4-a830-416c-89d8-7efa68efb8dc
Source identifiers:
3989
Local pid:
pubs:3989

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