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Journal article

Three dimensional visualization of semiconductor multi-quantum well interfaces

Abstract:
Individual interfaces in multiquantum well materials have been imaged in three dimensions using the position sensitive atom probe. The location and chemical identity of single atoms within a small volume have been determined and a constant composition contour constructed in three dimensions. This form of observation makes it possible to directly assess the interface morphology.

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Publisher:
Publ by IOP Publishing Ltd
Journal:
Institute of Physics Conference Series
Volume:
117
Pages:
87-90
Publication date:
1991-01-01
ISSN:
0951-3248
URN:
uuid:76fe9d6e-4787-4e44-baf8-320096a348e6
Source identifiers:
410848
Local pid:
pubs:410848
Language:
English

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