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Interface effects, band overlap and the semimetal to semiconductor transition in InAs/GaSb interband resonant tunnelling diodes

Abstract:

We report some of the highest 77 K peak to valley ratios (PVRs) for single heterojunction InAs(n)/GaSb(p) resonant conduction diodes. The devices were grown with low background doping (n ≈ p ≈ 1016 cm-3) on (100) oriented substrates by atmospheric pressure MOVPE, and were prepared by switching the precursors in a predetermined order, to have "InSb" or "GaAs" like interfaces. We observe a stronger resonance with a weaker temperature dependence when the interface is "GaAs" like. In all samples,...

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
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Journal:
Solid State Electronics
Volume:
37
Issue:
4-6
Pages:
977-979
Publication date:
1994-01-01
DOI:
ISSN:
0038-1101
URN:
uuid:74f3904a-4ecb-43bb-a219-33295cc500e0
Source identifiers:
133958
Local pid:
pubs:133958
Language:
English

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