Journal article icon

Journal article

n-type doping in Cd2SnO4: a study by EELS and photoemission

Abstract:
The influence of n-type doping on the electronic structure of Cd2SnO4 has been studied by electron-energy-loss spectroscopy (EELS) and UV photoemission spectroscopy (UPS). In substitution on Cd sites or Sb substitution in Sn sites leads to the appearance of well-defined plasmon loss peaks in EELS, with a maximum plasmon energy of just below 0.6 eV in Sb-doped material. A weak conduction-band feature is observed in UPS, the width of which is of the order expected from a simple free-electron model.
Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

Actions


Access Document


Files:
Publisher copy:
10.1103/PhysRevB.53.15405

Authors


More by this author
Institution:
University of Oxford
Department:
Mathematical,Physical & Life Sciences Division - Chemistry - Inorganic Chemistry Laboratory
More by this author
Institution:
University of Oxford
Research group:
Egdell Group
Department:
Mathematical,Physical & Life Sciences Division - Chemistry - Inorganic Chemistry Laboratory
Publisher:
The American Physical Society Publisher's website
Journal:
Physical Review B Journal website
Volume:
53
Issue:
23
Pages:
15405 - 15408
Publication date:
1996-06-05
DOI:
EISSN:
1550-235x
ISSN:
1098-0211
URN:
uuid:74c6609e-eed9-4ed2-9c76-d29e3ca7be70
Local pid:
ora:2281

Terms of use


Metrics



If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP