n-type doping in Cd2SnO4: a study by EELS and photoemission
- The influence of n-type doping on the electronic structure of Cd2SnO4 has been studied by electron-energy-loss spectroscopy (EELS) and UV photoemission spectroscopy (UPS). In substitution on Cd sites or Sb substitution in Sn sites leads to the appearance of well-defined plasmon loss peaks in EELS, with a maximum plasmon energy of just below 0.6 eV in Sb-doped material. A weak conduction-band feature is observed in UPS, the width of which is of the order expected from a simple free-electron model.
- Publication status:
- Peer review status:
- Peer reviewed
- Publisher's version
- Copyright holder:
- The American Physical Society
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- Citation: Dou, Y. & Egdell, R. G. (1996) 'n-type doping in Cd2SnO4: a study by EELS and photoemission', Physical Review B, 53(23), 15405-15408. [Available at http://prb.aps.org/]. Copyright 1996 The American Physical Society.
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