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OXIDATION AND THE STRUCTURE OF THE SILICON-OXIDE INTERFACE

Abstract:

We propose that, in the oxidation of silicon, a thin layer of a distinct 'reactive' oxide separates the silicon from the amorphous silica. This reactive layer is stabilized by stress generated with the underlying silicon during oxidation at the interface. Our hypothesis resolves some apparent anomalies in recent oxidation studies using oxygen isotopes, and integrates observations of microcrystallinity early in an oxidation process, and pulsed-laser atom probe analyses of intermediate layers a...

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Publication status:
Published

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Publisher copy:
10.1080/13642818708211203

Authors


STONEHAM, A More by this author
GROVENOR, C More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Journal:
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
Volume:
55
Issue:
2
Pages:
201-210
Publication date:
1987-02-05
DOI:
EISSN:
1463-6417
ISSN:
0141-8637
URN:
uuid:745d55f0-f40e-4d4a-a927-c10b85193f69
Source identifiers:
3122
Local pid:
pubs:3122
Language:
English

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