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MICRO-INDENTATION INVESTIGATION OF DOPING EFFECTS ON THE FRACTURE BEHAVIOR OF GERMANIUM.

Abstract:

Doping in semiconductors has been known for some time to change dislocation velocities and theories have been produced which indicate that this effect should occur in any material with a band-gap. Recent work has shown that doping can also change more 'macroscopic' mechanical properties, such as yield stress, hardness and fracture behavior. This paper reports extensions of the work on the fracture behavior of germanium; in particular, it has been found that: (a) a high uniform dislocation den...

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Publisher:
Int Metallographic Soc
Journal:
Microstructural Science
Volume:
13
Pages:
27-38
Publication date:
1986
ISSN:
0361-1213
URN:
uuid:72cf1d13-c938-46e8-b441-256c225e0da3
Source identifiers:
430640
Local pid:
pubs:430640
Language:
English

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