Journal article

INTERSUBBAND SCATTERING RATES IN GAAS-GAAIAS HETEROJUNCTIONS

Publication status:: Published

Actions

Email

Email this record

Send the bibliographic details of this record to your email address.

Your Email
Please enter the email address that the record information will be sent to.

-
Your message (optional)
Please add any additional information to be included within the email.
Cite

Cite this record

APA Style

Leadley, D., Nicholas, R., Harris, J., & Foxon, C. (1990). INTERSUBBAND SCATTERING RATES IN GAAS-GAAIAS HETEROJUNCTIONS. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 5(11), 1081–1087.

MLA Style

Leadley, D., et al. “INTERSUBBAND SCATTERING RATES IN GAAS-GAAIAS HETEROJUNCTIONS.” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 5, no. 11, 1990, pp. 1081–87.

Chicago Style

Leadley, D, R Nicholas, J Harris, and C Foxon. 1990. “INTERSUBBAND SCATTERING RATES IN GAAS-GAAIAS HETEROJUNCTIONS.” SEMICONDUCTOR SCIENCE AND TECHNOLOGY 5 (11): 1081–87.
Share
Print

Access Document

Publisher copy:: 10.1088/0268-1242/5/11/002

Authors

+ Leadley, D More by this author

Role:: Author

+ Nicholas, R More by this author

Role:: Author

+ Harris, J More by this author

Role:: Author

+ Foxon, C More by this author

Role:: Author

Journal:: SEMICONDUCTOR SCIENCE AND TECHNOLOGY More from this journal
Volume:: 5
Issue:: 11
Pages:: 1081-1087
Publication date:: 1990-11-01
DOI:: 10.1088/0268-1242/5/11/002
EISSN:: 1361-6641
ISSN:: 0268-1242

Pubs id:: pubs:14753
UUID:: uuid:7233a112-bb80-471c-b746-974d7fdfdb64
Local pid:: pubs:14753
Source identifiers:: 14753
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 1990

Licence:: Terms and Conditions of Use for Oxford University Research Archive

Views and Downloads

About views and downloads

If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP