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Nitrogen in silicon: Transport and mechanical properties

Abstract:

A novel dislocation locking technique is applied to nitrogen-doped float-zone silicon. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen diffuses to the dislocations. The stress required to bring about dislocation motion is then measured, generally at 550 degrees C. The segregation of nitrogen to dislocations is found to be stable to at least 1200 degrees C, and the dislocation unlocking stress ...

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Publication status:
Published

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Publisher copy:
10.1016/j.nimb.2006.10.023

Authors


Murphy, JD More by this author
Alpass, CR More by this author
Giannattasio, A More by this author
Senkader, S More by this author
Falster, RJ More by this author
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Volume:
253
Issue:
1-2
Pages:
113-117
Publication date:
2006-12-05
DOI:
ISSN:
0168-583X
URN:
uuid:72071733-5e71-427a-9d9b-ae55c12417f4
Source identifiers:
8857
Local pid:
pubs:8857

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